Abstract
The temperature dependence of the spontaneous Hall R s( T) and Nernst-Ettingshausen Q s( T) coefficients of amorphous Co-Ti thin films has been studied. It was found that the spontaneous Hall effect was due to side-jump mechanism and the R s( T) dependence arose from the magnetic and phonon contribution to the resistivity. The spontaneous Nernst-Ettingshausen coefficient is discused applying the Kondorskii and Berger formula Q = −T(α + βϱ). An attempt to find a suitable explanation of our Q s( T) results reveals that the scattering mechanism responsible for the observed Q s( T) behaviour are mainly the phonon and spin-disorder scattering although the latter plays an important role.
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