Transport properties of a single-molecular transistor at finite temperature

Abstract

Quantum transport in a single molecular transistor device is studied at finite temperature in the presence of electron-electron and electron-phonon interactions and dissipation using the Anderson-Holstein-Caldeira-Leggett model. The dissipation due to substrate is treated exactly by a canonical transformation and the electron-phonon interaction is eliminated by the Lang-Firsov transformation. Finally the effective Hamiltonian is studied using the Keldysh non-equilibrium Green function technique and the tunnelling current through the single molecular transistor is obtained at finite temperature.