Quantum transport in a single molecular transistor at finite temperature

Manasa Kalla,Ashok Chatterjee,Narasimha Raju Chebrolu

doi:10.1038/s41598-021-89436-5

Manasa Kalla, Ashok Chatterjee + Show 1 more

Open Access

https://doi.org/10.1038/s41598-021-89436-5

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Abstract

We study quantum transport in a single molecular transistor in which the central region consists of a single-level quantum dot and is connected to two metallic leads that act as a source and a drain respectively. The quantum dot is considered to be under the influence of electron–electron and electron–phonon interactions. The central region is placed on an insulating substrate that acts as a heat reservoir that interacts with the quantum dot phonon giving rise to a damping effect to the quantum dot. The electron–phonon interaction is decoupled by applying a canonical transformation and then the spectral density of the quantum dot is calculated from the resultant Hamiltonian by using Keldysh Green function technique. We also calculate the tunneling current density and differential conductance to study the effect of quantum dissipation, electron correlation and the lattice effects on quantum transport in a single molecular transistor at finite temperature.

Highlights

In order to examine the role of temperature on the transport properties of an single molecular transistor (SMT) device, we investigate the behaviour of Spectral density function A, Current density J and differential conductance G with respect to SMT parameters for different values of temperature
In this work, the quantum dissipative effect on the electronic transport properties of a single molecular transistor at finite temperature in the presence of e-e and e-p interactions
The dissipative effect arises from the interaction of the quantum dot (QD) phonon with the phonons of the substrate that plays the role of a heat reservoir

Summary

Introduction

In order to examine the role of temperature on the transport properties of an SMT device, we investigate the behaviour of Spectral density function A , Current density J and differential conductance G with respect to SMT parameters for different values of temperature.

Results

Conclusion