Abstract
Fully dense Sm-doped ceria powders, with doping content between 2 and 30at.% and grain size below 20nm, were consolidated using a High-Pressure Field Assisted Sintering (HP-FAST) apparatus. Using a uniaxial pressure of 600MPa relative densities above 95% were achieved at temperatures as low as 600°C with sintering times of only 5min. Thanks to these exceptionally mild sintering conditions, grain growth during densification was very limited. The samples were characterized using impedance spectroscopy and the results showed a single semicircle, due to an overwhelming contribution of the grain boundary resistance. Thanks to the brick layer model, the present results were compared to literature data on microcrystalline materials and revealed that, contrary to what previously reported by several authors, negligible modification of the specific grain boundary conductivity can be produced through the reduction of the grain size in Sm-doped ceria in the considered doping interval.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
