Abstract
Perovskite-based materials can be widely used in the aerospace and transportation field. Perovskite manganese oxides La0.7Sr0.3MnO3 (LSMO) thin films were grown on LaAlO3 (100) and Si (100) single crystal substrates by the polymer-assisted chemical solution deposition (PACSD) method. Electronic transport behavior, microstructure, and magnetoresistance (MR) of LSMO thin films on different substrates were investigated. The resistance of LSMO films fabricated on LaAlO3 substrates is smaller than that on the Si substrates. The magnetic field reduces resistance of LSMO films both on Si and LAO in the wide temperature region, when the insulator-metal transition temperature shifts to higher temperature. The low-field magnetoresistance of LSMO films on Si in low temperature range at 1 T is larger than that of LSMO films on LAO. However, the MR of LSMO film on LAO films at room-temperature is about 5.17 %. The thin films are smooth and dense with uniform nanocrystal size grain. These results demonstrate that PACSD is an effective technique for producing high quality LSMO films, which is significant to improve the magnetic properties and the application of automotive sensor.
Highlights
Perovskite-based functional materials have a wide application prospect due to colossal magnetoresistance (CMR) and magnetic refrigeration effects
Perovskite manganese oxides La0.7Sr0.3MnO3 (LSMO) thin films were grown on LaAlO3 (100) and Si (100) single crystal substrates by the polymer-assisted chemical solution deposition (PACSD) method
The resistance of LSMO films fabricated on LaAlO3 substrates is smaller than that on the Si substrates
Summary
Perovskite-based functional materials have a wide application prospect due to colossal magnetoresistance (CMR) and magnetic refrigeration effects. They can be used to make the magnetic head, magnetic resistance memory, and motor transducer. The transducer can be used to measure and control current, position, angle etc They can be used in aerospace, automotive industry as magnetic refrigeration material. As for the CSD technique for the preparation of LSMO films, many researches about epitaxy, concentration of precursor solution, annealing, LFMR as well as the GBs on substrates of MgO, LaAlO3, Si, SrTiO3, and GaAs have been reported [18, 19]. The microstructure, the surface, and the electronic transport behavior and magnetoresistance (MR) properties of LSMO thin films were presented
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