Abstract
This work deals with the electrical characteristics and physical properties of novel dielectric systems based on silicon nanocrystals embedded in SiO2 matrices. In particular, the transport phenomena of 10 nm thick SiO2 capacitors with an embedded thin layer (5 nm) of LPCVD Si nanocrystals, located at different tunneling distances from the oxide–substrate interface, are studied. An original model based on an elastic tunneling phenomenon, which allows an efficient evaluation of the main structural characteristics of Si dots, is proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
