Abstract
Electron drift velocity and mobility InSb are calculated from the results of pulsed measurements of the conductivity and Hall effect in the temperature range from 80°K to 200°K. Above a critical field where impact ionization set in, electron drift velocity decreases with increasing electric field. This increase in electron collision frequency or reciprocal mobility due to electrical breakdown was found to be proportional to the first power of increased hole density for n -type materials. This fact can be interpreted as the results of electron-hole scattering. The discrepancy between the results and theoretical expression of electron-hole scattering, namely Brooks-Herring formula, is removed in n -type materials when carrier drag effect is taken into accout. The disagreement, however, remains for p -type materials. Magnetic field dependence of electron mobility and effects of minority carrier injection in high electric fields are also studied.
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