Abstract
Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving p-type mobilities peaking at 3240 cm2/Vs, a considerable improvement over previous reported bulk mobilities for samples with compensation doping. Growth trials on bulk material have also been carried out to investigate the optimum growth conditions for future structures, with the aim of minimising the occurrence of natural growth defects in GaSb, which act as acceptors. Together these measurements lay the ground work for (magneto)transport studies of two-dimensional charge-carriers in AlxGa1-xSb/GaSb heterostructures, which has not been previously reported.
Highlights
GaSb has been known and well-studied as an optoelectronic material for many years, but knowledge of its electronic properties is limited [1]
GaSb is a close relation of GaAs, with minimal lattice mismatch to its natural tertiary barrier material (AlGaSb) [2]
Other III-V semiconductors, such as GaSb, have to compromise their material quality when grown on a GaAs substrate due to the lattice mismatch
Summary
GaSb has been known and well-studied as an optoelectronic material for many years, but knowledge of its electronic properties is limited [1]. Previous growth studies have shown that by lowering the growth temperature and the V/III flux ratio, these intrinsic defects can be decreased to 1×1016 cm-3, and by changing the growth further, n-type GaSb is achievable through a different defect, though the transport details of this are not known [6].
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