Abstract
InP has been homoepitaxially grown on both exactly (111)B oriented and misoriented substrates by gas-source molecular beam epitaxy. The optimal growth condition for obtaining a mirrorlike surface was found to be a substrate misorientation of 0.5°–1° toward 〈110〉, a substrate temperature of 470 °C, and a V/III incorporation ratio close to unity. The unity V/III ratio was established readily by monitoring the specular beam intensity of reflection high-energy electron diffraction when the phosphorus beam was modulated, similar to migration enhanced epitaxy. The InP epilayers with specular surfaces are of high quality as characterized by x-ray diffraction, Hall measurements, and low-temperature photoluminescence.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
