Abstract
A porous silicon/c-Si heterostructure has been formed by the method of stain etching. The transport mechanism of the diode has been investigated using the current–voltage characteristics ( I– V) measured at different temperatures (296–380 K). A model based upon the multi-step tunnelling of the carriers at reverse and low forward bias (<1 V) and for field tunnelling across a narrow barrier at higher forward bias (>1.5 V) is proposed. A band-gap diagram is proposed for the ZnO/PS/c-Si heterostructure. The electron affinity of the quantum-confined Si is determined to be 3.69±0.08 eV.
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