Abstract
Porous silicon/c-Si heterostructures have been formed by the method of stain etching.The properties of light emitting diodes (LED) and solar cells have been studied. The transport mechanism of the diode has been investigated from the current–voltage characteristics measured at different temperatures (296–380 K). A model based on multi-step tunneling of carriers at reverse and low forward bias (<1 V) and on field tunneling across a narrow barrier at higher forward bias (>1.5 V) is proposed for the LED. In the case of the solar cells the porous silicon is formed in between the fingers of the front grid contact. Application of porous silicon in solar cells results in an increase of the short-circuit current and efficiency of the cells by about 30%.
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