Abstract
Transport mechanism of rectifying D-σ-A-SAc molecule in the structure of vertical metal-molecule-metal (MMM) has been investigated by using variable temperature measurement. We successfully synthesized a novel D-σ-A-SAc molecule and fabricated the molecular rectifying array device by using self-assembly technique. The results of variable temperature measurements suggest that electron injection in the interface between electron donor molecule and Ti/Au electrode is dominated by a thermal emission with a barrier height of around 0.29 eV while carrier injection between thiolated A-σ-D molecule and gold electrode is dominated by tunneling with a barrier height of around 0.8 eV. Therefore, we suggest that the origin of rectification comes from energy differences of two interfacial barriers in MMM device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
