Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques

Abstract

We report on the nature of electrical transport in silicon-on-insulator layers, investigated using several techniques: the standard single magnetic field Hall effect, mobility spectrum analysis of the magnetic field-dependent Hall effect, and the pseudo-metal-oxide-semiconductor-field-effecttransistor technique. For moderate and strong inversion, electrical transport in the temperature range 77–300 K is dominated by a lone electron species with a mobility of 500−1000 cm2/Vs. A good correlation is noted between these methods.