Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors

Abstract

Transport in ultra-thin-body (UTB) SOI MOSFETs and silicon nanowire MOSFETs is extensively studied by experiments and calculations. The transport properties in these devices are strongly affected by the quantum confinement effects. Mobility enhancement of both electron and hole is experimentally demonstrated in (110) UTB SOI MOSFETs. The characteristic variations of silicon nanowire transistors with nanowire width of less than 10 nm are also experimentally investigated.