Abstract
The two-dimensional electron gas with electron densities higher than 1016 m−2 which is formed at the interface in undoped GaAs/AlxGa1−xAs heterostructure by the electric field generated by a top gate is studied. Despite the high electron density in the sample, rather high mobilities of about 100 m2/Vs can be achieved with sufficient small gate leakage currents. The population of the second subband is studied from Shubnikov-de Haas measurements in these devices.
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