Abstract
We report the fabrication and characterization of thin-film grain boundary junctions in Tl-based superconductors on bicrystal substrates. Post-deposition processed Tl2Ba2CaCu2O8 films were grown on bicrystal SrTiO3 substrates, with varying degrees of misorientation angle θ. Critical current densities and current-voltage curves had a strong dependence on θ. For θ≥10°, there was a two-to-three order of magnitude reduction in critical current density, and for θ≥20°, the current-voltage curves displayed resistively shunted junction behavior. These high angle grain boundary junctions have features at 77 K that are attractive for device applications, including sharp voltage onsets, well-behaved dc magnetic and rf field dependence, IcRn products as large as 300 μV, and low 1/f noise. Simple dc superconducting quantum interference devices fabricated with these junctions exhibited transfer functions of up to 30 μV/Φ0 at 77 K.
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