Abstract
The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80K and 320K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕb vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕb,mean assuming values of 0.59eV±0.07 (80–140K) and 0.25eV±0.12 (140–320K) respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
