Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide

Abstract

We have investigated transport characteristics of epitaxial graphene grown on semi-insulating silicon-face 4H-silicon carbide (SiC) substrate by thermal decomposition method in relatively high N 2 pressure atmosphere. We have succeeded in forming 1–2 layers of graphene on SiC in controlled manner. The surface morphology of formed graphene was analyzed by atomic force microscopy (AFM), low-energy electron diffraction (LEED) and low-energy electron microscope (LEEM). We have confirmed single-layer graphene growth in average by this method. Top-gated, single-layer graphene field-effect transistors (FETs) were fabricated on epitaxial graphene grown on 4H-SiC. Increased on/off ratio of nearly 100 at low temperature and extremely small minimum conductance (0.018–0.3 in 4 e 2/h) in gated Hall-bar samples suggest possible band-gap opening of single-layer epitaxial graphene grown on Si-face SiC.