Single-layer graphene field-effect transistors with ferroelectric PZT gate

Xiaowen Zhang Xiaowen Zhang,Haiming Zhao Haiming Zhao,Tianling Ren Tianling Ren,Yilin Sun Yilin Sun,Tingting Feng Tingting Feng,Jianlong Xu Jianlong Xu,Gang Li Gang Li,Yuanfan Zhao Yuanfan Zhao,Cheng Zhang Cheng Zhang,Dan Xie Dan Xie

doi:10.1109/icsict.2014.7021336

Single-layer graphene field-effect transistors with ferroelectric PZT gate

Xiaowen Zhang Xiaowen Zhang, Haiming Zhao Haiming Zhao + Show 8 more

https://doi.org/10.1109/icsict.2014.7021336

Copy DOI

Publication Date: Oct 1, 2014

Citations: 1

Affiliation: Tsinghua University

#Ferroelectric Gate #Single-layer Graphene Field Effect Transistors + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when V gmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.

Full Text