Transport and noise properties of graphene-based transistors revealed through atomistic modelling

Abstract

We discuss an intriguing set of transport and noise properties of graphene-based transistors that can be investigated in a direct way with atomistic modeling - Non-Equilibrium Green's Functions with a Tight-Binding Hamiltonian - and are not directly accessible with models based on a higher level of physical abstraction. We present an investigation of the achievable electron mobility in channels based on graphene nanoribbons with realistic imperfections. Then, we will discuss how the small gap and small density of states of bilayer graphene can be used to design tunnel FETs with extremely steep subthreshold slope. Then, as far as noise is concerned, we will show the impact of electron-electron interaction and of interband transitions in enhancing the channel noise of FETs based on small-gap carbon nanotubes.