Abstract
The paper presents resistivity and magnetization measurements on nearly stoichiometric Fe3Si films epitaxially grown on GaAs substrates by electron-beam evaporation in an ultrahigh vacuum chamber. In the low-temperature resistivity a T3 term was found in all samples. A term like that is known to describe the anomalous single-magnon scattering processes in half-metallic materials and confirms so for our samples the hypothesis of half-metallic ferromagnetism in Fe3Si. The films show an anisotropic magnetoresistance in low magnetic fields. In high magnetic fields a negative longitudinal and transverse magnetoresistance (MR) has been observed linearly depending on the field strength. In the vicinity of 200 K the MR shows maximum absolute values up to 1.5% at magnetic fields of about 8 T. From the magnetization measurements a magnetic moment of 0.86μB/atom was obtained, which is close to that of bulk Fe3Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
