Abstract
Large positive magnetoresistance (MR) and high MR sensitivity in low magnetic fields have been discovered in the Sr-doped LaMnO3 and Nb-doped SrTiO3 p–n junctions fabricated by laser molecular-beam epitaxy. The MR ratios, defined as ΔR∕R0, ΔR=RH−R0, are observed as large as 11% in 5Oe, 23% in 100Oe, and 26% in 1000Oe at 290K; 53% in 5Oe, 80% in 100Oe, and 94% in 1000Oe at 255K. The MR sensitivities are 85Ω∕Oe at 290K, 246Ω∕Oe at 255K, and 136Ω∕Oe at 190K, respectively, with the applied magnetic field changed from 0to5Oe. The positive MR ratios and high MR sensitivities of the p–n junctions are very different from that of the LaMnO3 compound family.
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