Transparent resistive random access memory (T-RRAM) based on Gd&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; film and its resistive switching characteristics

Kou-Chen Liu Kou-Chen Liu,Yi-Chun Chan Yi-Chun Chan,Chun-Chih Kuo Chun-Chih Kuo,Chun-Wen Cheng Chun-Wen Cheng,Wen-Hsien Tzeng Wen-Hsien Tzeng,Kow-Ming Chang Kow-Ming Chang

doi:10.1109/inec.2010.5425137

Transparent resistive random access memory (T-RRAM) based on Gd<inf>2</inf>O<inf>3</inf> film and its resistive switching characteristics

Kou-Chen Liu Kou-Chen Liu, Yi-Chun Chan Yi-Chun Chan + Show 4 more

https://doi.org/10.1109/inec.2010.5425137

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Publication Date: Jan 1, 2010

Citations: 3

Affiliation: Chang Gung University, National Yang Ming Chiao Tung University

#Transparent Resistive Random Access Memory #Resistive Switching Characteristic + Show 8 more

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Abstract

A transparent resistive random access memory (T-RRAM) based on ITO/Gd 2 O 3 /ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd 2 O 3 /ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of −2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.

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