Transparent Organic Nonvolatile Memory and Volatile Synaptic Transistors Based on Floating Gate Structure

Abstract

In order to comply with the rapid development of new-generation electronics, developing memories which could meet the demands for specific application such as flexibility, transparency and neuromorphic functions are of great significance. In this work, a transparent organic nonvolatile memory (transparency≥81%) is developed with Ag nanowire as floating gate layer, which exhibits excellent memory characteristics and mechanical flexibility. Moreover, the transition from memory to artificial synapse is achieved by adjusting the concentration of Ag nanowire. This work provides a new solution for transparent flexible memory and shows their potential for next-generation transparent organic electronics.