Transparent graphene interconnects for monolithic integration of GaN-based LEDs

Abstract

Multilayer graphene as a transparent interconnect electrode for the monolithic integration of GaN-based LEDs was investigated. On the basis of morphology determined by scanning electron microscopy and optoelectrical properties, it was found that graphene acts as an effective interconnect in GaN-based LED arrays. Graphene interconnect electrodes formed an air bridge between adjacent microchips, leading to the reduction in reverse leakage current. Compared with conventional LEDs with metal interconnects, the light output power of LEDs with graphene interconnects exhibited an improvement of 7.4%. This enhancement originated from the significantly reduced absorption of the light emitted from graphene electrodes, which was confirmed by spatial beam profile measurements.