Abstract
AbstractTantalum‐doped indium tin oxide thin films were deposited by a cosputtering technique with an ITO target and a Ta2O5 target. The variations of microstructure, electrical and optical properties with substrate temperature and annealing temperature were investigated in some detail. Ta‐doped ITO thin films showed better crystalline structure with different prominent plane orientation by different heating process. ITO:Ta thin films deposited at room temperature showed better optical and electrical properties. Increasing substrate temperature and reasonable annealing temperature could remarkably improve the optical and electrical properties of the films. The variation of carrier concentration had an important influence on near‐IR reflection, near‐UV absorption and optical bandgap. ITO:Ta thin films showed wider optical bandgap. ITO:Ta thin films under the optimum parameters had a sheet resistance of 10–20 Ω/sq and a transmittance of 85% with an optical bandgap of above 4.0 eV. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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