Abstract
Transparent Ti-doped zinc oxide (TZO) thin films with high conductivity were fabricated using radio frequency (rf) magnetron sputtering on glass substrates. The material properties of the TZO films correlated with sputtering parameters were discussed. The TZO thin films with thickness of 258.5-nm-thick were used as anodes of organic light emitting diode devices and the devices exhibited lower turn-on voltage (3 V) and higher current efficiency than the commercial indium tin oxide (ITO) anodes. The TZO thin film may be a potential alternative to an ITO anode due to its low operating voltage, low price, and non-toxicity.
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