Abstract
Tin-doped indium-oxide (ITO) and Al-doped zinc oxide (AZO) films were fabricated by reactive evaporation and rf magnetron sputtering. The average optical transmittance ( λ: 400–800 nm) reached 95% and the sheet resistance was as low as 30 Ω/□. Organic light-emitting devices (LEDs) were fabricated with ITO and AZO transparent films as anode and poly (1,4-phenylene vinylene) (PPV) or tris(8-hydroxyquinoline) aluminum (Alq 3) as luminescence layer. EL and PL spectra, current–voltage and brightness–voltage data were analyzed. It is revealed that the turn-on voltage of the devices was less than 20 V and the carrier injection was consistent with the tunneling theory. Degradation of current with time at a given external voltage was obtained and discussed.
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