Transparent and conductive GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method

Abstract

Transparent and conductive GaN thin films have been prepared on glass substrates using the metalorganic chemical vapor deposition method utilizing electron cyclotron resonance plasma. A resistivity below 2×10−2 Ω cm and a carrier concentration on the order of 1020 cm−3 were obtained for oxygen-doped GaN thin films prepared at 350 °C using triethylgallium in combination with either NH3 or N2 as source gases. A sheet resistance of 160 Ω/⧠ and an averaged transmittance in the visible region of 80% were realized in a film 1100 nm thick. The thermal and chemical stability of GaN thin films are described.