Abstract
Transparent amorphous Indium-Gallium-Zinc-oxide thin films transistors (a-IGZO TFTs) were fabricated using spin-coating technique at a relative low annealing temperature of 300 °C. The effects of the gallium (Ga) concentration on the properties of the IGZO solutions, the optical properties of the a-IGZO films,and the a-IGZO TFTs device properties were researched. The a-IGZO thin films were uniform and smooth, root mean square roughness of IGZO films was less than 0.4 nm, and the transmittance was more than 80 % in the visible wavelength. The results showed that An appropriate amount of Ga doping and annealing temperature could significant improve the a-IGZO TFTs’ device performance. A saturation mobility of 0.04 cm2 V−1 s−1 was obtained when the Ga concentration reached 10.7 %.
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