Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs

Abstract

Amorphous indium-gallium-zinc oxide (a-IGZO) thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor (TFT) devices. In-situ x-ray photoelectron spectroscopy (XPS) illustrates that weakly bonded oxygen (O) atoms exist in a-IGZO thin films deposited at high O2 pressures, but these can be eliminated by vacuum annealing. The threshold voltage (V th) of the a-IGZO TFTs is shifted under positive gate bias, and the V th shift is positively related to the deposition pressure. A temperature variation experiment in the range of 20 K–300 K demonstrates that an activation energy of 144 meV is required for the V th shift, which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films. Accordingly, the V th shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO2 interface under positive gate bias. These results provide an insight into the mechanism responsible for the V th shift of the a-IGZO TFTs and help in the production of reliable designs.