Abstract
Aluminum nitride is a very attractive semiconductor material, suitable for UV optoelectronics due to its large band gap. The influence of the ion bombardment during energetic deposition with metal plasma immersion ion implantation and deposition (MePIIID) on the defect structure and hence the optical properties is investigated for a pulse voltage between 0 and 5 kV at a duty cycle of 9%. With increasing voltage, anti-site defects are decreasing. However, secondary effects as increased oxygen adsorption and oxygen complex formation suggest that the simultaneous heating of the sample by the incoming ions is responsible for this effect and ions even at 5 keV might produce more damage than they remove.
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