Abstract
This paper presents the results of optical characteristics of ITO thin film with different buffer layer thicknesses of SiO2and Nb2O5for touch sensor application. SiO2and Nb2O5buffer layers were deposited by using RF/DC magnetron sputtering equipment. Buffer layers were inserted between Glass and ITO layer. In order to compare with experimental results, Essential Macleod Program (EMP) was adopted. Based on EMP simulation, [Nb2O5/SiO2/ITO] multi-layered thin film exhibited a high transmittance more than 85% in the visible region. The actual experimental results also showed transmittance more than 85% in the visible region, indicating the simulated results were well matched with experimental ones. The sheet resistance of ITO based film was about 300ohm/sq..
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