Abstract
A technique is developed for generating pseudometallic plasma inductive grid arrays within a semiconductor wafer. The induced plasma elements are defined by a surface impedance which is discussed. Results of an investigation into the transmission properties of a variety of array designs between 16 and 40 GHz are presented. Measurements are performed on a silicon wafer illuminated by an external optical source via a negative image mask.
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Schedule a callMore From: IEEE transactions on microwave theory and techniques
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