Abstract
Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and TiO2 layers on the surface of GaSe crack, while the Ga2O3 compound forms perfect films. A comparison of the transmission spectra and generation efficiency of terahertz pulses was made for the SiO2-GaSe, TiO2-GaSe, and Ga2O3-GaSe structures and for the GaSe:S 0.9 wt % and GaSe:S 7 wt % crystals. It was found that an increase in the concentration of sulfur in the GaSe:S crystals results in a decrease in the efficiency of generation of terahertz radiation by optical rectification of femtosecond laser pulses. Among the films deposited on the surface of GaSe, the SiO2 film has the least impact on the efficiency of generation.
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