Abstract
Great attention has been given on the sol-gel synthesis and spin-coating deposition techniques for the fabrication of various thin films. Because of its simple technique to fabricate dielectric (metal oxide) films using tetraethyl orthosilicate and titanium isopropoxide precursors. In this work, transparent single layer of SiO2 and TiO2 thin film was deposited on a glass substrate and characterized by FTIR, UV-visible spectroscopy, fluorescence and scanning electron microscopy techniques. The single layer thin film was mechanically stable and strong by adhering to glass substrates. The FTIR transmittance spectrum evidenced the existence of Si-O-Si and Ti-O-Ti at ~1100 and 1400 cm-1. The UV-visible absorbance spectra of single layer of SiO2 and TiO2 thin films showed strong absorption at below 00 nm. The excitation wavelength at 380 nm, the fluorescence spectra of both thin films showed the highest emission spectrum in between 733-798 nm. The SEM studies confirmed the smooth surface in both SiO2 and TiO2 layers. Further, it could be useful for various applications such as back reflector in solar cells, anti-reflection coatings, hydrophobic and anti-fogging materials.
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