Abstract
Two-dimensional rib waveguides were formed by anodization etching of single-heterostructure GaAs–Alx Ga1−x As slab waveguides. Low transmission losses (<2 cm−1) were observed for GaAs layer thicknesses ≳ 0.8 μm. Efficient preferential excitation of individual discrete modes and good mode stability were obtained in rib guides 0.8 μm thick, with 0.1-μm-high steps and width ≤10 μm.
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