Abstract
ABSTRACTThe damage induced in 3C‐SiC epilayers on a silicon wafer by 2.3‐MeV Si ion irradiation for fluences of 1014, 1015, and 1016 cm−2, was studied by conventional and high‐resolution transmission electron microscopy (TEM/HRTEM). The evolution of extended defects and lattice disorder is followed in both the 3C‐SiC film and Si substrate as a function of ion fluence, with reference to previous FTIR spectroscopy data. The likelihood of athermal unfaulting of native stacking faults by point defect migration to the native stacking faults is discussed in relation to damage recovery. Threshold energy densities and irradiation doses for dislocation loop formation and amorphous phase transformation are deduced from the damage depth profile by nuclear collisions. The role of electronic excitations on the damage recovery at high fluence is also addressed for both SiC and Si.
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