Abstract
CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3COO) 2 and Na 2S 2O 3, and pH is controlled in an acidic region by adding H 2SO 4. The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1×10 11, 1×10 12, 1×10 13 and 1×10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences.
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