Abstract
A damaged layer on a GaAs surface induced by low-energy Ar+ ion irradiation was investigated using a transmission electron microscope. Ar+ ions with primary energies of 200, 100, and 50 eV were irradiated onto the GaAs surface at incident angles of 90°, 60°, and 30° from the sample surface. The results revealed that the thickness of the damaged layer of ∼4.3 nm formed by 200 eV Ar+ ion irradiation at 90° was reduced to ∼1.5 nm with 50 eV Ar+ ion irradiation at 30°. The results confirmed that lowering the primary energy of ions to 50 eV and employing glancing incidence are very effective for achieving higher depth resolution in sputter depth profiling.
Published Version
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