Abstract
The intermetallic superconductor magnesium diboride (MgB2) is a promising candidate for use in superconducting electronic devices because of its high transition temperature (Tc). These applications require the development of a high-quality film fabrication process. We have previously reported the growth of MgB2 films deposited on MgO (100), SrTiO3 (100) and Al2O3 (0001) substrate using a co-evaporation method and molecular beam epitaxy (MBE) apparatus. In this paper, we will report the correlation between structural properties and physical properties of as-grown MgB2 films deposited on MgO (100), ZnO (0001), and Si (111) substrate. The films’ basal properties have been confirmed by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), resistivity measurements and SQUID magnetometry. The details of the interfacial structure were studied by transmission electron microscopy (TEM). We will then discuss the most important parameters for fabricating high quality as-grown MgB2 films and junctions.
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