Transmission electron microscopy study for investigating high-temperature reliability of Ti10 W90 -based and Ta-based diffusion barriers up to 600°C

Abstract

Abstractauthoren Transmission electron microscopy (TEM) analysis, including energy dispersive X-ray (EDX) (elemental mapping, line, and point measurements) and energy filtered TEM (EFTEM) methods, is applied to investigate the high temperature reliability, especially material diffusion, of two types of diffusion barriers: titanium–tungsten-based (TiW-based) and tantalum-based (Ta-based), with nickel (Ni) layer on top. Both barriers were deposited as a form of stacked layers on sili-con (Si) wafers using the physical vapor deposition (PVD) technique. TEM analysis is performed on both barriers before and after annealing (at 600C for 24 h inside a vacuum chamber). No diffusion of material into the Si substrate as observed. Additionally, only diffusion between the Ni and adjoining TiW layers, and between Ni and adjoining Ta layers in the TiW-based and Ta-based barriers, respectively, are observed due to annealing.