Transmission Electron Microscopy Studies of Kr+-Implanted Silicon

Abstract

The structure and the depth distribution of radiation damage caused in (111) Si by high-dose krypton implantations (E; = 150 keV, T; = RT, D1 = 5 x 1015 , D2 = 1 x 1016 and D3 = 5 x 1016 cm z ) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed. PACS numbers: 61.16.Bg, 61.72.Ff, 61.72.Qq, 61.72.Tt, 68.35.Fx, 81.40.Gh