Abstract
By using the plan-view transmission electron microscopy, cross-sectional transmission electron microscopy, and Rutherford backscattering (and channeling) spectrometry technology, the effects of H+-implantation on the formation of secondary defects in self-implanted Si(100) were investigated. Experiments indicate that the H+-implantation can reduce the formation of secondary defects and improve the perfection of crystal in self-implanted Si(100).
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