Abstract
By using plan-view transmission electron microscopy, cross-sectional transmission electron microscopy, and Rutherford backscattering (and channeling) spectrometry, effects of H+, Ar+, and self-ion-irradiation on the secondary defect in P+-implanted Si(100) were investigated. Experimental results indicate that ion-irradiation onto P+-implanted Si(100) before the annealing can reduce the secondary defect formation, but after the annealing it increases the secondary defect concentration. The physical reason for the effects of the ion-irradiation on the secondary defects in P+-implanted Si(100) was discussed. Among H+, Ar+, and the self-ion, H+ is the best irradiation ion for the reduction of the secondary defect formation in P+-implanted Si(100). An H+-irradiation fluence up to 1×1017H+cm−2 does not create any observable additional secondary defect.
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