Abstract
The control of dislocation density during the growth of GaAs and related compounds is highly desirable for obtaining improved performance and reliability of opto-electronic devices. Doping of single crystal GaAs grown by the LEC process with Indium has been known to reduce the dislocation density significantly. Substitutional solid-solution strengthening of GaAs as an InAs, unit has been suggested to be responsible for reduction of dislocation density. To understand the mechanism involved in dislocation density reduction, deformation tests have been performed on [001] oriented Gax In1-xAs single crystals in the temperature range 700-1100°C and this paper reports some results of the TEM characterization of dislocations in these deformed single crystals.Specimens of GaAs and Ga0.99In0.01As For TEM observations were made by cutting thin slices in a desired orientation, followed by mechanical polishing and ion-milling. These specimens were examined in a JEOL JEM 200CX transmission electron microscope at 200KeV equipped with a double-tilt goniometer stage.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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