Abstract
A pronounced reduction in dislocation density was observed in gallium antimonide single crystals after partial back‐melting and controlled resolidification. The distribution of dislocations in the parent crystals and regrown sections was studied by etch‐pit counting and x‐ray topography (Lang method). The observed reduction in dislocation density was explained in terms of the dislocation distribution in the parent crystal and the geometry and thermal conditions of the back‐melting process.
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