Abstract
Graphene can be grown on three major low-index substrates of Si(111), (110), and (001) by forming a 3C-SiC thin film and by subliming Si atoms from the top few layers of the SiC film. We have investigated the structure of graphene/3C-SiC interface by cross-sectional transmission electron microscopy (XTEM) and Raman-scattering spectroscopy. While the interface layer quite similar to that on the graphene/6H-SiC(0001) face is found to exist on the 3C-SiC(111)/Si(111) substrate, no such interface structure exists on the (110)- and (001)-oriented faces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
