Abstract
A GaN-based blue micro-light-emitting diode (µ-LED) array using InGaN as barriers for In0.18Ga0.82N/In0.015Ga0.985N multiple quantum wells (MQWs) is fabricated. Compared with a conventional device using GaN as barriers, the light output power (8.8 mW) exhibits an enhancement of two times. In addition, an increased transmission data rate up to 1.50 Gbps is demonstrated in a visible light communication protype. These prominent improvements are believed to relate to the suppressed quantum-confined Stark effect and the decreased defect/dislocation density in MQWs using InGaN barriers, both of which allow for higher luminescence efficiency and optical power. Consequently, the resultant higher signal-to-noise ratio in the data transmission process leads to an enhanced data rate.
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