Abstract
In this study, a simplified temperature-dependent expression of electron mean free path (MFP) is proposed first. Then, the electrical model of multi-walled carbon nanotube bundle-based through-silicon vias (MWCNTB-TSVs) is established considering the temperature effects of the MFP, metal-oxide-semiconductor capacitance, substrate conductance and number of conducting channels of MWCNT. Based on this model, the propagation constant, forward transmission coefficient S 21 and crosstalk at different temperatures are calculated. By analysing the phase constant, the zero dispersion transmission condition is obtained. According to this condition, the guidelines on how to select the substrate in different level integrations are proposed. Furthermore, a concise formula for the equivalent conductivity of MWCNTB is proposed. Moreover, the minimum diameter of MWCNTB-TSV whose attenuation is less than that of copper-filled TSV has been deduced.
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